In a major breakthrough, Samsung announced that it has developed ultra-fast high-capacity dynamic random-access memory (DRAM).
512-gigabyte (GB) DDR5 module is first in the industry to use High-K Metal Gate solution for reducing power leakage.
It is based on High-K Metal Gate Process technology capable of delivering more than double the performance of DDR4. This will bring exponential performance in supercomputing, artificial intelligence (AI) and machine learning, and data analytics.
Logic semiconductors have been traditionally using silicon oxynitride. But due to the thinning of insulation layers, the problem of higher leakage current was being seen. Now, the insulator would be replaced by the HKMG material resulting in lesser leakage and higher performance. This will also be a beneficial change for data centers with critical energy efficiency as it uses approximately 13% lesser power.
HKMG process was adopted by the South Korean giant in the year 2018 first when the design of GDDR6 was underway. Now, the company aims to lure data centers that require high-speed memory solutions for Artificial Intelligence, Machine Learning, and Data Analytics operations.
Currently, most desktops and servers use DDR4 technology but the biggest chip maker in the world Intel is working closely with Samsung over the project. Carolyn Duran, Vice President and GM of Memory and IO Technology at Intel said, “Intel’s engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon Scalable processors, code-named Sapphire Rapids.”
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Simultaneously, Samsung is working with partners like Intel Corp. to sampling variations of DDR5 memory products for verification.
